When polysilicon is used as a gate electrode or an interconnection in integrated circuits, its limited conductivity can degrade circuit perfor mance. At high dopant concentrations, the active carrier concentration is limited by solid solubility of the dopant species in crystalline silicon.
In surface barrier detectors, while the bulk leakage current depends on the quality of silicon wafer substrate and volume of the depleted region (with its maximum width being the wafer thickness for fully-depleted configuration), the surface leakage current is determined by the conductivity of the surface between the front and back electrodes.
As feature sizes become smaller and intrinsic transistor delays decrease on chips of increasing overall dimensions, the resistance of polysilicon interconnections is becoming a more serious limitation on integrated-circuit performance.
The heavily doped polysilicon induces band bending in the silicon wafer with lower doping level, creating an accumulation layer due to the differing work functions. This effect results in pronounced field-effect passivation, thereby reducing the minority carrier concentration at the silicon/SiO x interface.
While the resistivity in moderately doped polysilicon is much greater than that in similarly doped single-crystal silicon, the resistivity in heavily doped polysilicon is only about twice that in correspondingly doped single-crystal silicon.
For thin polysilicon films deposited in a polycrystalline form over the temperature range from 650 to 1050°C in an atmospheric-pressure, cold-wall reactor, the resistivity parallel to the surface is in the mid-lOs !i-cm range and is not sensitive to the deposition temperature [5.2].
The current leakage of the reverse biased p-n junction is a trou-blesome phenomenon, because it changes the charge stored in the ... of the dynamic random access memory (DRAM) cir-cuit …
Because of the potential for thermal instability, researchers are searching for metal gate electrodes to replace polysilicon . ... On a FinFET 6 T-SRAM cell, various leakage …
It has been observed that chemically grown oxide exhibits very low leakage current density, good stoichiometry, and thermal stability compared to thermally grown SiO 2 …
Following extensive characterization and simulation of the behavior of low-temperature laser recrystallized polysilicon thin-film transistors (TFT''s), we propose a low field leakage current …
current may be lower because fewer free carriers are generated; however, the larger bandgap may lead to a greater temperature dependence of the leakage current than in polysilicon with …
The samples'' current density–voltage (J–V) curves were measured in a semiconductor test and analyser (ELECS, EL-420C) system using the Kelvin method to …
The anomalous leakage current ILin LPCVD polysilicon MOSFET''s is attributed to field emission via grain-boundary traps in the (front) surface depletion region at the drain, and an analytic …
We have studied leakage current in sub-micron p-channel polysilicon thin-film-transistor. Our study revealed that thermionic emission is the dominant mechanism at low drain bias (-0.1 V) …
Following extensive characterization and simulation of the behavior of low-temperature laser recrystallized polysilicon thin-film transistors (TFT''s), we propose a low field leakage current …
Leakage current values were measured in a point of 50 ns. ... edge of N-well should be located in the middle of cell. Leakage simulation results, pointed in Table 2, show ... between the …
Based on a generation-recombination model including the Poole-Frenkel (PF) effect and phonon-assisted tunneling, numerical analysis shows that the logarithm of …
In this paper we show good agreement between numerical simulations and experimental data of the bias, temperature dependence and statistical behaviour of leakage …
The integration of stacked structures with rugged polysilicon electrodes and conventional cell dielectrics offers the greatest potential for the fabrication of advanced DRAMs ... should lead …
The polysilicon rods then go through the Czochralski process to create monocrystalline silicon ingots. In this process, a polysilicon rod is suspended in a quartz …
An empirical relation between the field enhanced emission rate and electric field is proposed, which can be used to model the leakage current of poly-Si TFTs as a function of …
The samples'' current density–voltage (J–V) curves were measured in a semiconductor test and analyser (ELECS, EL-420C) system using the Kelvin method to …
Some leakage current models for LDD poly-Si have been proposed [48]. These models show that the drain leakage current of a poly-Si TFT depends strongly on the drain voltage and …
This work gives an overview on different technological solutions for polysilicon removal in industrial tunnel oxide passivated contact (i-TOPCon) n-type silicon solar cell …
However, in V-NAND cells, there are many electrical problems due to the nature of poly-Si material [5–7]. For examples, this poly-Si suffers from high leakage current and low …
We propose a conductive model to explain these phenomena: leakage paths along grain boundaries exist in polycrystalline silicon, and these paths are responsible for …
Leakage current is an important parameter in thin film transistors (TFTs) for achieving gray scales in active matrix liquid crystal displays (AMLCDs). Leakage regulation is …
In this article, we investigate the leakage current of n- and p-channel offset gate (L=10 μm, ΔL=2 μm) excimer laser annealed polysilicon TFTs in terms of the polysilicon layer …